It is possible to generate base current by means of a
is the ratio of collector current to base current to achieve a given collector-emitter voltage when the transistor is saturated, for transistors of high current handling capacity β Sat. It is well-known that in order to saturate a transistor, that is to say to reduce the voltage across the transistor to an extremely lev/ value, the base current must increase as the collector current increases. H03K2217/0036- Means reducing energy consumption.not by contact-making or -breaking covered by H03K17/00 H03K2217/00- Indexing scheme related to electronic switching or gating, i.e.not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors using transformer coupling H03K17/601- Electronic switching or gating, i.e.not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors H03K17/60- Electronic switching or gating, i.e.not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices H03K17/56- Electronic switching or gating, i.e.not by contact-making and –breaking characterised by the components used
H03K17/51- Electronic switching or gating, i.e.H03K17/0424- Modifications for accelerating switching by feedback from the output circuit to the control circuit by the use of a transformer.H03K17/042- Modifications for accelerating switching by feedback from the output circuit to the control circuit.H03K17/04- Modifications for accelerating switching.H03K17/06- Modifications for ensuring a fully conducting state.H03K17/00- Electronic switching or gating, i.e.230000001172 regenerating Effects 0.000 claims description 5.239000002131 composite material Substances 0.000 claims description 6.KKEBXNMGHUCPEZ-UHFFFAOYSA-N 4-phenyl-1-(2-sulfanylethyl)imidazolidin-2-one Chemical compound N1C(=O)N(CCS)CC1C1=CC=CC=C1 KKEBXNMGHUCPEZ-UHFFFAOYSA-N 0.000 claims description 6.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority claimed from GB8236179 external-priority Application filed by Lansing Bagnall Ltd filed Critical Lansing Bagnall Ltd Publication of EP0128940A1 publication Critical patent/EP0128940A1/en Status Withdrawn legal-status Critical Current Links Original Assignee Lansing Bagnall Ltd Priority date (The priority date is an assumption and is not a legal conclusion.
Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Inventor David Gurwicz Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Withdrawn Application number EP19840900285 Other languages German ( de) Google Patents Darlington transistor switch Google Patents EP0128940A1 - Darlington transistor switch EP0128940A1 - Darlington transistor switch
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